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S-LBAS316T1G Datasheet, Leshan Radio Company

S-LBAS316T1G diode equivalent, high speed diode.

S-LBAS316T1G Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 221.20KB)

S-LBAS316T1G Datasheet
S-LBAS316T1G
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 221.20KB)

S-LBAS316T1G Datasheet

Features and benefits


* Ultra small plastic SMD package
* High switching speed: max. 4 ns
* Continuous reverse voltage: max. 75 V
* Repetitive peak reverse voltage: max. 100 V .

Application

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS
* High-spee.

Description

The LBAS316T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323(SC76) SMD plastic package. FEATURES
* Ultra small plastic SMD package
* High switching speed: max. 4 ns
* Continuous reverse vol.

Image gallery

S-LBAS316T1G Page 1 S-LBAS316T1G Page 2 S-LBAS316T1G Page 3

TAGS

S-LBAS316T1G
High
speed
diode
Leshan Radio Company

Manufacturer


Leshan Radio Company

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